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Before epitaxial layer deposition and device construction, the SiC substrate quality must be evaluated. Wafer inspection should be carried out once the epitaxial layer has been produced to confirm that the location of faults is identified and their number is under control.
Depending on how well they can extract structural information from the sample’s surface or below it, inspection techniques can be divided into surface inspection and subsurface inspection.
As we go on to explore further in this part, KOH (potassium hydroxide) is typically used to view surface flaws by etching them to a visible size under the optical microscope in order to precisely determine the type of surface defects.
High-resolution non-destructive surface inspection methods are necessary for in-line inspection. SEM, AFM, OM, CDIC, and other common surface inspection methods include confocal differential interference contrast microscopy (CDIC), optical microscopy, and scanning electron microscopy (SEM).
Global SiC substrate defect inspection market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Lasertec Corporation said that SICA88, the newest version of their SiC wafer inspection and review equipment, has been released. Customers can simultaneously inspect and evaluate surface flaws as well as crystallographic defects with the use of SICA88’s integrated surface and photoluminescence (PL) inspection capabilities.
Lasertec has already begun promoting the sale of the SICA88 and has already received orders from a number of clients, including ROHM Co., Ltd.
SICA is an inspection tool made to assist in overcoming these difficulties. In 2009, Lasertec released SICA61 for research and development purposes, and in 2011, SICA6X for commercial use.
Since then, SICA has gained a reputation for being highly sensitive and accurate at classifying defects and has been enthusiastically embraced by many clients.
SICA88 introduces a new platform that combines the surface inspection capabilities of PL inspection and confocal DIC optics from earlier SICA model generations.
It now provides simultaneous detection and classification of crystallographic defects like basal plane dislocations (BPD) and stacking faults (SF) inside Epi layers as well as scratches and epi defects on the wafer surface, assisting in the identification and analysis of flaws that lead to device malfunctions.
SICA88 has a throughput that is twice as high as SICA6X’s, and BPD inspection is also achievable without sacrificing throughput performance.
