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SiC substrates are specialised materials used in semiconductor technology derived from silicon carbide, a substance renowned for its high heat conductivity, superior mechanical strength, and broad band gap.
SiC substrates offer a sturdy foundation for the fabrication of high-power, high-frequency electronic devices, such as power electronics and radio frequency components, due to their exceptional hardness and light weight.
In addition to being used in gas and chemical sensors, silicon carbide substrates are also used in cutting-edge research areas including quantum computing and high-frequency communications, which promotes innovation and performance across a variety of technical industries. SiC substrates are frequently employed in high-power MMIC applications.
The Global sic substrate market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
In order to meet the growing demand from ST’s clients for SiC devices across automotive and industrial applications as they make the switch to electrification and seek improved efficiency, STMicroelectronics developed an integrated Silicon Carbide substrate manufacturing plant in Italy.
The SiC substrate manufacturing facility will be a first of its kind in Europe for the production of 150mm SiC epitaxial substrates in volume, combining all stages of the production cycle. It will be constructed at ST’s Catania plant in Italy alongside the SiC device manufacturing facility that already exists. 200mm wafers will be developed by ST in the near future.
In order to continue to ramp up volumes to support the automotive and industrial customers in their move, this new plant will be crucial to our vertical integration in SiC and will strengthen our supply of SiC substrate.
With a sizable portfolio of important patents, ST has become the industry leader in SiC as a result of its commitment to and concentration on R&D. Given that it is the location of ST’s main SiC R&D and manufacturing facilities, Catania has long been a key location for innovation.
It has effectively aided in the creation of innovative approaches for creating more and better SiC devices. This investment will strengthen Catania’s role as a global competence centre for Silicon Carbide technology and for additional growth opportunities.
Catania already has a well-established eco-system on power electronics, including a long-term, successful collaboration between ST and different stakeholders (the University, the CNR – Italian National Research Council -, companies involved in equipment and product manufacturing-, as well as a large network of suppliers).
