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The platform provides high-power transistors for use in wireless mobile and Internet of Things transmitters as well as low-noise transistors for use in GPS and smartphone wireless receivers.
Advanced CMOS, low-noise, high-speed, and high-power SiGe devices are all included in the SiGe Terabit Platform, along with special patented features that enable best-in-class performance for the most demanding ICs in high-speed communication networks.
The Global SiGe BiCMOS Terabit Platform market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
High performance SiGe BiCMOS technologies are available from Tower Semiconductor and are developed for use in high-frequency wireless communications and high-speed networking applications.
This market-leading manufacturing platform features transistors with speeds greater than Ft/Fmax of 325/450GHz for usage in 10, 100, and 400GbE data communications or high-frequency wireless applications like 24GHz and 77GHz vehicle radar and 5G mm-wave.
Tower Semiconductor’s most popular SiGe BiCMOS volume production process right now is SBC18H5, which is perfect for optical fibre transceiver components like Trans-impedance amplifiers (TIAs), Laser Drivers (LDs), Limiting Amplifiers (LAs), and Clock Data Recovery (CDRs) with data rates up to 400Gb/s and beyond.
Due to its great dynamic range for transmitters, low cost in comparison to comparable performing CMOS nodes, and low noise performance for receivers ( 1.3dB at 40GHz), this architecture is also ideal for mm-wave phased array applications.
As an illustration, the SBC18H3 technology was used to construct the biggest single-chip phased array in the world, which had 256 transmitter elements and produced 43 dBm (EIRP) at 60GHz (Zihir et al. RFIC 2015).
The SBC18H5 technology from the company is now being used in the 800 Gb/s data networks of the future. High levels of mixed signal and logic integration are provided by single and dual gate CMOS. Complementary BiCMOS with fast vertical PNP transistors (available at speeds up to 23GHz) and BVceo up to 16V.
