By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Coming Soon
The platform provides high-power transistors for use in wireless mobile and Internet of Things transmitters as well as low-noise transistors for use in GPS and smartphone wireless receivers.
Advanced CMOS, low-noise, high-speed, and high-power SiGe devices are all included in the SiGe Terabit Platform, along with special patented features that enable best-in-class performance for the most demanding ICs in high-speed communication networks.
The Global SiGe BiCMOS Terabit Platform market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
High performance SiGe BiCMOS technologies are available from Tower Semiconductor and are developed for use in high-frequency wireless communications and high-speed networking applications.
This market-leading manufacturing platform features transistors with speeds greater than Ft/Fmax of 325/450GHz for usage in 10, 100, and 400GbE data communications or high-frequency wireless applications like 24GHz and 77GHz vehicle radar and 5G mm-wave.
Tower Semiconductor’s most popular SiGe BiCMOS volume production process right now is SBC18H5, which is perfect for optical fibre transceiver components like Trans-impedance amplifiers (TIAs), Laser Drivers (LDs), Limiting Amplifiers (LAs), and Clock Data Recovery (CDRs) with data rates up to 400Gb/s and beyond.
Due to its great dynamic range for transmitters, low cost in comparison to comparable performing CMOS nodes, and low noise performance for receivers ( 1.3dB at 40GHz), this architecture is also ideal for mm-wave phased array applications.
As an illustration, the SBC18H3 technology was used to construct the biggest single-chip phased array in the world, which had 256 transmitter elements and produced 43 dBm (EIRP) at 60GHz (Zihir et al. RFIC 2015).
The SBC18H5 technology from the company is now being used in the 800 Gb/s data networks of the future. High levels of mixed signal and logic integration are provided by single and dual gate CMOS. Complementary BiCMOS with fast vertical PNP transistors (available at speeds up to 23GHz) and BVceo up to 16V.
Several companies have sought partnerships in order to drive innovation and further their goals in the industry.
One such company is Sigma Group, a leading provider of Industrial Internet of Things (IIoT) solutions. The company has recently established a new partnership with SiGe Semiconductor to develop a BiCMOS Terabit Platform.
Through this collaboration, the two companies will develop a platform that combines Sigel’s advanced biCMOS process with SiGe’s specialized application-specific integrated circuit (ASIC) design capabilities. The platform will enable customers to benefit from high-speed, low-power, and reliable computing.
Seagate announced a strategic partnership with NXP Semiconductors. This alliance creates an unprecedented opportunity for Seagate to use NXP’s advanced semiconductor technologies and advanced process architectures to further develop its Terabit Platform.
The collaboration also enables NXP to enhance its existing designs with Seagate’s expertise in the storage industry. Specifically, NXP will supply specialized semiconductor products and materials to Seagate, while Seagate will utilize their expertise and technology to develop new terabit-level storage solutions.
SiGe recently acquired NXP Semiconductors, a leading provider of advanced integrated circuits and solutions for automotive, wired, and wireless applications. NXP’s expertise in RF and low-power systems helps to drive up performance and efficiency of the SiGe BiCMOS Terabit Platform.
SiGe recently acquired a controlling interest in Samsung Electronics Co., Ltd., one of the leading electronics and device companies in the world. Samsung devices and components underpin many of the most advanced innovative products on the market today, and the partnership between the two companies should greatly benefit SiGe’s Terabit platform.
Recent trends in SiGe BiCMOS Terabit Platform are pointing to a rapid expansion of its capabilities. The most immediate benefit that comes from the latest developments is the increased speed that can be achieved with the integration of multiple transistors.
For example, a single transistor is now capable of transferring up to five terabytes of data per second. This extreme speed is made possible by the combination of BiCMOS with SiGe heterojunction technology, and transceivers using this combination are expected to be accessible in the near future.
In addition, the latest developments have also made possible the integration of higher data rates into the transceivers. With the integration of the SiGe heterojunction technology, transceivers can now support data rates of up to 800 gigabits per second.
This incredible increase in data transfer rate will greatly improve the performance of consumer electronic devices, such as mobile phones, laptops, and DVD players.
The SiGe BiCMOS Terabit Platform also facilitates the development of more advanced signal conditioning components. By utilizing the heterojunction technology in the platform, it is now possible to achieve greater precision in the conditioning of analog signals.
This allows developers to create more reliable and efficient analog systems. The increased accuracy achieved through this increased precision helps ensure that signal distortion is kept to a minimum.
In addition, SiGe BiCMOS Terabit Platform technology is allowing developers to create system designs with a greater degree of integration.
This means that components such as multiplexers, amplifiers, and frequency synthesizers can now be integrated into a single package instead of requiring the integration of multiple components into a single solution. This type of integration significantly reduces the cost of designing and manufacturing systems.
As SiGe BiCMOS Terabit Platform technology continues to advance, it will continue to benefit the consumer electronics, communications, automotive, and industrial markets. Companies utilizing this technology will be able to reap the rewards of its immense capabilities.
The future looks extremely bright for SiGe BiCMOS Terabit Platform technology, and it is certain to become the standard choice for many applications.
