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Technology for front-end-of-line (FEOL) transistors is taking up most of the effort in process technology.
Due to the integration of copper and the associated low k dielectric films, back-end-of-line interconnect technology has received a lot of attention recently and for a number of years.
While low-k films continue to be a challenge, transistor process technology is also becoming a challenge and a potential bottleneck.
Therefore, the introduction of the single-wafer Quantum X low current/high energy ion implanter by Applied Materials is driven by this focus on transistor technology at the 65nm and 45nm nodes. Along with wafer cleaning, ion implant has been one of the skeptics to batch wafer processing.
However, single wafer technology in the field of high current ion implants, according to Applied, is needed now.
The Global single-wafer high-current implanter market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The company Axcelis Technologies, Inc. (Nasdaq:The second shipment of the Purion H200(TM) high current implanter was announced today by ACLS, a leading supplier of cutting-edge, high-productivity semiconductor industry solutions.
A major manufacturer of power devices selected the Purion H200 system for use in a Si power device production ramp.In the fourth quarter, the system was released.
The Purion H200 is the first and only single-wafer high current implanter that is designed to cover all high dose implant applications from energies as low as 5 keV to 200 keV, and it is especially suitable for the requirements of manufacturers of power devices and foundries.
The Purion H200, based on the industry-proven Purion H high current beamline and its distinctive scanned spot beam architecture, combines the precision and accuracy of medium current implanters with the productivity of high current tools.