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INTRODUCTION
MOS semiconductors and packages with radiation hard power for use in the aerospace sector. It is essential to use radiation-hardened microchips in electronic devices for space and aerospace applications in order to prevent radiation damage. A large selection of radiation-hardened semiconductors are available from Infineon HIRel.
The Infineon rad hard MOSFET power transistors are the industry standard in radiation hardness and electrical performance and are based on the novel CoolMOS superjunction technology.
The Single Event Effect (SEE) was tested up to LET62 with Xe and LET95 with Pb ions, and the TID hardness is stated up to 100 krad (300 krad upon request). Infineon provides the best radiation hard powerMOS transistors for all types of space applications because of their exceptionally low specific RDS(ON) and convenient Safe Operating Area (SOA) regarding SEE.
JANS is the most stringent screening and acceptance standard now in use to guarantee the functionality, consistency, and dependability of discrete semiconductors intended for space flight.
To endure strong particle interactions, solar and electromagnetic events, which can destroy space-based systems and impair operations, satellites that transport voice and data communications need to be equipped with improved radiation technology. We offer power/military MOSFETs in hermetic packaging to satisfy these and other difficult high-reliability design specifications.
GLOBAL SPACE GRADE RAD-HARD TRANSISTORS MARKET SIZE AND FORECAST
The Global Space grade Rad-Hard Transistors market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
RECENT DEVELOPMENT
Today’s system designers face a particular challenge from military and space applications. The usage of radiation-hardened (rad hard) components is necessary for space hardware to function in harsh environmental conditions, including exposure to intense ionising radiation.
Customers of IR HiRel appreciate our unmatched proficiency in power MOSFET radiation testing as well as our range of products and solutions that are designed for optimum performance and durability in harsh environmental conditions.
Numerous applications for geosynchronous and geostationary orbit, Medium Earth Orbit (MEO), and Low Earth Orbit have successfully utilised IR HiRel space power MOSFETs (LEO).
Two new radiation-hardened (rad-hard) gallium nitride (GaN) transistors have been unveiled by EPC Space LLC of Haverhill, Massachusetts, USA, for use in high-power-density applications. These transistors are said to be more affordable and effective than the closest comparable rad-hard silicon MOSFET.
The EPC7018G and EPC7007B have drain-to-source voltages (VDS) of 100V and 200V, respectively, and are offered in hermetic packages with very tiny footprints.
GaN-based power devices significantly outperform silicon-based power devices in terms of breakdown strength, gate charge, switching losses, thermal conductivity, and on-resistance. They also enable higher switching frequencies, which lead to higher power densities, higher efficiencies, and more compact and lightweight circuitry for crucial space-borne missions.
COMPANY PROFILE
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