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Gallium and arsenic combine to form the chemical compound gallium arsenide (GaAs). It is a III/V semiconductor and is used to make products including optical windows, infrared light-emitting diodes, monolithic microwave integrated circuits, laser diodes, solar cells, and microwave frequency integrated circuits.
The best compound semiconductors for satellite broadcast receivers, communication receivers, and satellite communication receivers are high frequency GaAs (Gallium Arsenide) devices. HEMT devices are employed in satellite receiver systems to amplify weak signals without adding noise.
Gallium arsenide has some electronic properties that are superior to silicon’s. Gallium arsenide transistors may operate at frequencies more than 250 GHz thanks to its higher saturated electron velocity and greater electron mobility. GaAs devices are less susceptible to heat than silicon junctions because of their greater bandgap. Additionally, especially at high frequencies, GaAs devices tend to have less noise than silicon devices.
The global GaAs high frequency devices market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
RF Micro Devices has successfully validated products from their 6in wafer fab. Gallium Arsenide heterojunction bipolar transistor manufacturing at RFMD is transitioning from 4in to 6in wafers (GaAs HBTs). Without considerably raising the processing cost per wafer, the business anticipates that the conversion will more than double the number of die per wafer.
GaAs HBT semiconductors outperform traditional silicon-based semiconductors in terms of frequency and power efficiency. They are therefore perfect for high-frequency wireless communications applications like wireless phone power amplifiers. These are some of the most important parts of the radio portion of the handsets, amplifying the signal sent from the handset through its antenna back to the base station.
The first GaAs HBT PAs for mobile phones were marketed by RF Micro Devices, and these devices currently rule the cellular/PCS handset market. The business anticipates a rising share of GaAs HBTs and power amplifier modules in its products’ bill of materials (BOM) as the demand for modules rises and they become more tightly integrated.
