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The most effective GaN solution with lifetime reliability and financial benefits is provided by gallium nitride (GaN) FETdrivers with integrated gate drivers and GaN power devices.
GaN transistors can potentially achieve reduced switching losses since they switch considerably more quickly than silicon MOSFETs.
To establish an ohmic contact with the underlying 2DEG, the source and drain electrodes puncture through the top layer of AlGaN.
This results in a short-circuit between the source and drain up until the semi-insulating GaN crystal can stop the flow of current due to the depletion of the 2DEG “pool” of electrons.
The global GaN FET drivers market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The first automotive GaN FET with integrated driver, protection, and active power management is released by TI. Texas Instruments (TI) added the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications, expanding its high-voltage power management portfolio.
The new families of GaN FETs aid engineers in delivering twice as much power density, achieving 99% efficiency, and reducing the size of power magnetics by 59% when compared to conventional alternatives. In contrast to similar substrate materials like silicon carbide, TI developed these new FETs using its own GaN materials and manufacturing capabilities on a GaN-on-silicon (Si) substrate (SiC).
A crucial design factor in high-voltage, high-density systems is saving board space. The components inside of electronic systems must likewise get smaller and fit closer together as the systems themselves get smaller.
Engineers may achieve excellent performance while using less board space with TI’s new GaN FETs because they incorporate a fast-switching driver, inbuilt protection, and temperature sensing.
The great power density of TI’s GaN technology combined with this integration allows engineers to do away with more than 10 components that are traditionally needed for discrete systems. Additionally, when used in a half-bridge configuration, each of the new 30-m FETs can support up to 4 kW of power conversion.
