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The factory’s mainstay technology, brightfield inspection, measures light coming from a higher angle. It illuminates a wafer using broadband light. The light is then captured, and a digital image is created. Brightfield measures light reflected between 25 to 30 degrees. It’s between 30 and 40 degrees in Greyfield.
By identifying faults at an early stage and preventing yield losses, step-by-step scanning for defect inspection helps semiconductor producers. Expand every Bright-field microscopy advantages The colour of the visible structures is not altered by the optics. Certain structures are made visible by stains.
Less setup is needed for bright-field microscopy in order to view the samples. finding errors or flaws in the programme where its performance is poor or does not meet its specifications; A test that causes the system to behave erroneously and hence reveals a flaw in the system is successful.
The Global Bright Field Wafer Defect Inspection System market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The LS9600 is a new system from Hitachi High-Tech Company that can find particles and flaws on non-patterned bright field wafer deface inspection surfaces.
When compared to our previous generation systems, it has a new high-output, short-wavelength laser that increases throughput at the sensitivity levels necessary for the mass production of cutting-edge semiconductor devices by about 2.6 times.
With the launch of this product, Hitachi High-Tech will continue to support customers’ mass production of semiconductor devices by enhancing yields and lowering inspection expenses.Non-patterned wafer inspection systems are used for tasks including managing particles and flaws in semiconductor device manufacturing machinery and monitoring the state of non-patterned wafers.
The size of the important faults that affect yield during the manufacturing process has also decreased as a result of the shrinkage of semiconductor devices.
High-sensitivity inspection that can identify DOIs of 20 nm and less throughout the whole surface of non-patterned wafers is becoming increasingly necessary as a result. There is a great demand for high throughput in addition to high-sensitivity inspection to increase yield, which lowers inspection costs.
