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Vertical NAND is another name for 3D NAND (V-NAND). It is a type of non-volatile flash memory in which the flash memory cells in a transistor die are vertically stacked to increase storage density.
NAND flash storage technology stacks cells within a small chassis to provide users with a smaller storage component with higher performance. Storage cells in 2D NAND devices are placed side by side.
3D NAND adds another layer and vertically stacks cells. The stacking of memory (or silicon) chips on top of each other is referred to as 3D NAND. Some manufacturers refer to this as V (vertical) NAND. The goal is for the device to be faster, hold more information, run more efficiently, and consume less energy.
Samsung’s 32-layer 3D V-NAND, also known as Vertical NAND, requires more design technology to stack the cell arrays than the previous 24-layer V-NAND, but it has much higher production efficiency because Samsung can use essentially the same equipment it used for the first generation V-NAND.
Furthermore, Samsung has lately released a series of premium SSDs based on its 2nd generation V-NAND flash memory with storage capacities of 128 gigabytes (GB), 256 gigabytes (GB), 512 gigabytes (GB), and 1TB.
Samsung is expanding its V-NAND SSD line-up to high-end PC applications after delivering 3D V-NAND-based SSDs to data centers last year. When compared to planar (2D) MLC NAND-based drives, the new 3D V-NAND-based SSDs have roughly double the endurance for writing data and consume 20% less power.
Samsung will release new premium 3D-based SSDs based on this 2nd generation V-NAND memory with increased reliability and density to meet a wide range of customer needs.
The Global 3D V-NAND flash memory market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Multiple layers of memory cells are stacked vertically in 3D V-NAND, with links between them. Stacking numerous layers of memory cells into vertical layers increases storage capacity while reducing footprint and improves performance by allowing for shorter overall connections between memory cells.
When compared to 2D NAND, it also lowers the cost per byte. MLC designs could be used in 3D NAND flash devices.NAND cells are not intended to last indefinitely. Their cells, unlike DRAM, will wear out over time because write cycles are more strenuous than read cycles.
Although NAND storage systems have a limited number of write cycles, wear levelling handles the wear and tear of the cells performed by the flash controller, which is constantly present on the device.
Kioxia and Western Digital lowered costs by implementing many novel methods and architectures, allowing for further lateral scaling breakthroughs. This balance of vertical and lateral scaling results in increased capacity on a smaller die with fewer layers at a lower cost.
The businesses also pioneered CBA (CMOS directly Bonded to Array) technology, in which each CMOS wafer and cell array wafer are fabricated independently in their optimal state and then linked together to provide increased bit density and quick NAND I/O speed.
