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The switching of power transistors like MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and IGBTs (Insulated-Gate Bipolar Transistors) in a variety of applications like motor drives, power converters, and inverters is controlled by gate driver transistors, also referred to as gate driver ICs (Integrated Circuits).
A gate driver transistor’s main job is to send a powerful, quick electrical signal to the power transistor’s gate terminal, providing dependable and effective switching operations.
A low-power input signal from a control circuit or microcontroller is amplified by the gate driver transistor to produce a high-power output signal that can drive the gate capacitance of the power transistor.
Level shifters, amplifiers, and output stages are frequently found as essential parts of gate driver transistors. The level shifter raises the voltage level needed to drive the amplifier from the low-level input signal.
The signal is then amplified by the amplifier to the required levels of voltage and current. The amplified signal from the output stage is then used to drive the power transistor’s gate.
The Global Gate Driver Transistor Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs are two examples of high-voltage power devices that are designed to be driven by a new gate driver IC from Renesas Electronics Corporation, a leading provider of advanced semiconductor solutions.
The isolated gate driver with overcurrent protection for a power device, such as a MOSFET or IGBT, is now available in a wider range from Toshiba Electronic Devices & Storage Corporation. A built-in automatic recovery mechanism from protective operation is included in the new device, “TLP5222,” a 2.5A output smart gate driver photocoupler.
Shipments have begun. TLP5222 continuously checks the collector-emitter voltage (VCE) or drain-source voltage (VDS) of the power device it drives. Any increase in VDS or VCE caused by overcurrent created in the power device is detected by built-in overcurrent detection and a protection mechanism, which then gently turns it off.
