By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Silicon carbide (SiC) is a remarkable semiconductor material that has garnered significant attention in recent years. With its unique combination of physical and electrical properties, SiC is revolutionizing various industries, from power electronics to high-temperature applications.
Moreover, silicon carbide demonstrates excellent resistance to harsh environmental conditions, including extreme temperatures, radiation, and chemical exposure. This resilience makes it a preferred choice for high-temperature electronics, such as automotive engine control modules, aerospace systems, and oil and gas exploration equipment.
SiC wafers, which serve as the foundation for SiC-based devices, are produced using advanced growth techniques like physical vapor transport and chemical vapor deposition. These methods ensure the formation of high-quality crystals with minimal defects, enhancing the performance and reliability of SiC devices.
To sum up, silicon carbide is a versatile and promising semiconductor material with many uses. It is a desirable option for power electronics, high-temperature electronics, and optoelectronic devices due to its outstanding qualities, which include high thermal conductivity, strong breakdown electric field strength, and high-temperature operation capacity.
We can anticipate additional innovations as SiC technology research and development progress, enabling more effective and dependable electronic systems in a variety of industries.
The Global Silicon Carbide Wafer market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Three silicon carbide (SiC) based power modules in transfer molded technology have been released by Onsemi, a pioneer in intelligent power and sensor technologies, and are designed for use in on-board charging and high voltage (HV) DC DC conversion in all sorts of electric cars (xEV).
The APM32 series, which is uniquely created for high-power 11–22kW on-board chargers (OBC), combines SiC technology into a transfer molded package to improve efficiency and reduce charge times for xEVs.
To handle the 800V bus voltage, each of the three modules has minimal conduction and switching losses, best-in-class thermal resistance, and excellent voltage isolation.
A more potent OBC is finally made possible by the increased efficiency and decreased heat generation. One that can extend the xEV’s operational range and charge it more quickly—two essential features for users.
