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A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device’s conductivity.
Electronic signals can be switched or amplified using this material’s capacity to change conductivity in response to the amount of applied voltage. Nearly all MOSFETs fall under the umbrella of a metal-insulator-semiconductor field-effect transistor, or MOSFET.
Other devices may have greater values than the conventional 2V to 3V range for logic level MOSFETs.
The global medium voltage MOSFET market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
For use in industrial power supply and light electric vehicle (LEV) motor controllers, Magnachip Semiconductor Corp. has released its third-generation 200V Medium Voltage (MV) metal-oxide-semiconductor field-effect transistors (MOSFETs).
The third-generation trench MOSFET technology used in Magnachip’s new 200V MOSFETs maximizes energy efficiency in power devices.
In order to obtain a high figure of merit, the capacitance was lowered by 50% in comparison to the 100V MV MOSFET of the previous generation, and the improved core cell and termination design helped to reduce RDS(on) and total gate charge.
Fast switching and high power density also considerably improve the energy efficiency of these MOSFETs. These MOSFETs are ideal for LEV motor controllers and industrial applications because of their assured operating junction temperature range of -55°C to 175°C and high level of avalanche ruggedness.
“TW070J120B,” a 1200V silicon carbide (SiC) MOSFET, has been introduced by Toshiba Electronic Devices & Storage Corporation (“Toshiba”) for industrial applications, including large capacity power supplies.
In comparison to typical silicon (Si) MOSFET, and IGBT devices, the power MOSFET employing SiC, a novel material, achieves high voltage resistance, high-speed switching, and low On-resistance. As a result, it will aid in system downsizing and reduce power consumption.
It offers low On-voltage characteristics with a drain current of 20A or less[2] and reduces turn-off switching loss by around 80% and switching time (fall time) by about 70% when compared to Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT), “GT40QR21.”
The high range of 4.2V to 5.8V selected as the gate threshold voltage lowers the likelihood of malfunction (unintended turn on or off). Power loss can be minimized by using a SiC Schottky barrier diode (SBD) with low forward voltage.
The novel MOSFET will help industrial applications including big capacity AC-DC converters, solar inverters, and large capacity bidirectional DC-DC converters operate more efficiently by minimizing power loss. It will also help equipment size be smaller.