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In contrast to dynamic RAM (DRAM), static random access memory (SRAM) stores data in a static state without the need for frequent refreshing.
SRAM is non-volatile because it keeps its data stored as long as power is supplied to the memory module.
Flip-flop circuits, which are made up of transistors, are used to construct SRAM. The average SRAM memory cell has six transistors, allowing it to store one bit of data.
These transistors produce a latch that can store either a 0 or a 1 as the bit’s current state.
The Global Static random access memory (SRAM) Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Hard disk drives (HDDs) and solid-state drives (SSDs) are Western Digital Corporation’s primary areas of expertise as a leading global provider of storage solutions.
“Spin Transfer Torque-MRAM” (STT-MRAM) is one of Western Digital’s SRAM product lines. Non-volatile memory known as STT-MRAM combines the advantages of SRAM and magnetic random access memory (MRAM) technologies.
It offers quick access times, great endurance, and the ability to keep data in the absence of electricity. STT-MRAM can thus be used in applications that need both high performance and non-volatile storage.
The STT-MRAM solutions from Western Digital make use of the business’s magnetic storage technology capabilities, particularly its familiarity with magnetic tunnel junction (MTJ) structures and components.
Western Digital strives to offer cutting-edge memory solutions that answer the rising demand for high-speed, low-power, and non-volatile memory by merging these technologies into SRAM designs.
Western Digital’s STT-MRAM products are intended for a variety of uses, including internet of things (IoT) gadgets, business storage systems, industrial automation, and cache memory.
These solutions are designed to provide improved performance and dependability, making it possible to store and access data effectively in a variety of situations.