By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
A silicon nitride ceramic substrate is a type of ceramic material that is made from silicon nitride. Silicon nitride is a very strong and durable material that can be used to create various types of substrates, including electronic components and other devices.
Silicon nitride ceramic substrates are often used in high-temperature applications, such as power modules and heat sinks, because of their excellent mechanical properties and high thermal conductivities. They can also withstand thermal cycling and thermal shock better than other ceramic materials.
Silicon nitride ceramic substrates can be classified into two types: regular and high thermal conductivity. Regular silicon nitride ceramic substrates have a thermal conductivity of about 90 W/mK, while high thermal conductivity silicon nitride ceramic substrates have a thermal conductivity of about 170 W/mK.
The higher thermal conductivity is achieved by reducing the oxygen content and grain boundary phases in the silicon nitride material. Silicon nitride ceramic substrates are made by various methods, such as gas pressure sintering, spark plasma sintering, reaction bonding and post-sintering, and active metal brazing.
Gas pressure sintering involves heating silicon nitride powder under high pressure of nitrogen gas and adding sintering aids such as yttria or alumina to enhance densification and grain growth.
Spark plasma sintering uses pulsed direct current to heat silicon nitride powder under pressure and create a strong electric field that promotes rapid sintering and grain boundary diffusion.
Reaction bonding and post-sintering involves forming a green body of silicon powder mixed with sintering aids and nitriding it in a nitrogen atmosphere to form silicon nitride. The resulting porous body is then sintered at high temperature to increase the density and thermal conductivity.
Active metal brazing involves joining a silicon nitride ceramic substrate to a metal layer, such as copper, using a filler metal that can wet both materials. The filler metal usually contains elements such as titanium or zirconium that can react with the ceramic surface and form a strong bond
The Global Silicon nitride ceramic substrate market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Toshiba Materials, a Japanese company that offers high-quality silicon nitride ceramic substrates with high thermal conductivity and reliability for power modules and other applications.
Rogers Corp, a US company that provides silicon nitride ceramic substrates with low dielectric loss and high thermal conductivity for wireless communication and radar systems.
Kyocera, a Japanese company that manufactures silicon nitride ceramic substrates with high strength and thermal shock resistance for LED lighting and automotive electronics.
MARUWA, a Japanese company that produces silicon nitride ceramic substrates with high thermal conductivity and low coefficient of thermal expansion for power devices and heat sinks.
CoorsTek, a US company that supplies silicon nitride ceramic substrates with high fracture toughness and wear resistance for industrial and medical applications.
Hitachi Metals, a Japanese company that develops silicon nitride ceramic substrates with high thermal conductivity and low dielectric constant for microwave and millimeter wave devices
