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When making semiconductors, a single-wafer silicon epitaxy system is a specialized machine used to install thin silicon epitaxial layers onto individual silicon wafers.
The technique of generating a crystalline layer on top of a substrate with a comparable crystal structure is known as epitaxy. In the process of silicon epitaxy, a thin layer of superior single-crystal silicon is formed onto a silicon wafer, usually to change certain characteristics or introduce new functionality.
A single wafer is treated at a time by a single-wafer silicon epitaxy system, as opposed to batch techniques that process numerous wafers at once. Better control and epitaxial layer homogeneity across the wafer are made possible as a result, which is essential for creating high-performance semiconductor devices.
A reaction chamber, a gas delivery system, heating elements or a furnace, and controls for temperature, gas flow rates, and other process parameters are among the system’s essential parts.
The silicon epitaxy technique is carried out in a controlled environment called a reaction chamber. The precursor gases, including silane (SiH4), that react and deposit silicon atoms onto the wafer surface are supplied via the gas delivery system.
The temperature needed for the deposition process is maintained by the heating components or furnace. By modifying the process variables and the selection of precursor gases, the epitaxial layer’s thickness and attributes can be customized.
In order to produce homogeneous and high-performance epitaxial layers, single-wafer silicon epitaxy systems have the advantage of precise control over film thickness, doping concentration, crystal quality, and other factors.
This system’s epitaxial silicon layers are used in a variety of semiconductor applications, including the development of specialized structures like silicon-on-insulator (SOI) substrates and the formation of active regions in transistors, shallow junctions, strained silicon layers, and shallow junctions.
Overall, a single-wafer silicon epitaxy system is an essential tool for fabricating semiconductors that allow for the controlled growth of high-quality epitaxial silicon layers on individual silicon wafers, assisting in the creation of cutting-edge semiconductor devices.
The Global Single Wafer Silicon Epitaxy System Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The silicon carbide single crystal wafers (SiC wafers) with a diameter of 6 inches (150 mm), are used as materials for SiC epitaxial wafers*1 to be processed and installed into SiC-based power semiconductors (SiC power semiconductors), have begun to be produced in large quantities by Showa Denko K.K. (SDK) (TOKYO: 4004).
SiC power semiconductors outperform traditional silicon-based power semiconductors, the industry standard at the moment, in terms of heat resistance and high withstanding voltage.
SiC power semiconductor helps power modules become smaller and more energy efficient. As a result, SiC power semiconductors are in high demand across many industries, particularly for usage in xEVs, railcars, and industrial machinery.
