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The inverter contains high-voltage SiC transistors which allow for coupling to the medium voltage grid without requiring an additional transformer.
The three-phase inverter can be used to regulate reactive power as well as to actively filter undesirable harmonics in the electricity grid.
silicon transistors commercially available today have blocking voltages of up to only 6.5kV. In this case, multilevel topologies with a high degree of complexity are required for feed-in to a 10kV or 20kV medium voltage grid.
In addition silicon transistors have very high power losses. On the other hand, SiC semiconductors have a higher blocking voltage, which reduces the number of components required for a converter.
SiC motor controllers are based on wide-bandgap switching technology for maximum efficiency and flight endurance, and can be equipped with BLDC (brushless DC), sine and FOC (field-oriented control) drive variants to suit a range of requirements. They can also be customized for a variety of sensored or sensorless motor applications.
Global high voltage sic(silicon carbide) inverter accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
STMicroelectronics releases high-power modules for electric vehicles.The high-power modules for electric vehicles would boost performance and driving range.
Five new SiC-MOSFET based power modules provide flexible choices for vehicle makers, covering a selection of power ratings and support for operating voltages commonly used in electric vehicle (EV) traction applications.
Housed in ST’s ACEPACK DRIVE package optimized for traction applications, the power modules are reliable thanks to sintering technology, robust, and easy for manufacturers to integrate in EV drives.
Internally, the main power semiconductors are ST’s third-generation (Gen3) STPOWER SiC MOSFETs, which combine industry figure of merit (RDS(ON) x die area) with very low switching energy and super performance in synchronous rectification.
